complementary silicon power transistors these complementary silicon power transistors are designed for highspeed switching applications, such as switching regulators and high frequency inverters. the devices are also wellsuited for drivers for high power switching circuits. ? fast switching e t f = 90 ns (max) ? key parameters specified @ 100 c ? low collectoremitter saturation voltage e v ce(sat) = 1.0 v (max) @ 8.0 a ? complementary pairs simplify circuit designs ??????????????????????? ??????????????????????? maximum ratings ???????????? ???????????? rating ????? ????? symbol ?????? ?????? value ??? ??? unit ???????????? ???????????? collectoremitter voltage ????? ????? v ceo ?????? ?????? 80 ??? ??? vdc ???????????? ???????????? collectoremitter voltage ????? ????? v cev ?????? ?????? 100 ??? ??? vdc ???????????? ???????????? emitter base voltage ????? ????? v eb ?????? ?????? 7.0 ??? ??? vdc ???????????? ? ?????????? ? ???????????? collector current e continuous e peak (1) ????? ? ??? ? ????? i c i cm ?????? ? ???? ? ?????? 15 20 ??? ? ? ? ??? adc ???????????? ? ?????????? ? ???????????? total power dissipation @ t c = 25 c derate above 25 c ????? ? ??? ? ????? p d ?????? ? ???? ? ?????? 83 0.67 ??? ? ? ? ??? watts w/ c ???????????? ? ?????????? ? ???????????? operating and storage junction temperature range ????? ? ??? ? ????? t j , t stg ?????? ? ???? ? ?????? 55 to 150 ??? ? ? ? ??? c ??????????????????????? ??????????????????????? thermal characteristics ???????????? ???????????? characteristic ????? ????? symbol ?????? ?????? max ??? ??? unit ???????????? ???????????? thermal resistance, junction to case ????? ????? r q jc ?????? ?????? 1.5 ??? ??? c/w ???????????? ???????????? thermal resistance, junction to ambient ????? ????? r q ja ?????? ?????? 62.5 ??? ??? c/w ???????????? ? ?????????? ? ???????????? maximum lead temperature for soldering purposes: 1/8 from case for 5 seconds ????? ? ??? ? ????? t l ?????? ? ???? ? ?????? 275 ??? ? ? ? ??? c (2) pulse width 6.0 ms, duty cycle 50%. note: all polarities are shown for npn transistors. for pnp transistors, reverse polarities. on semiconductor ? semiconductor components industries, llc, 2002 april, 2002 rev. 3 1 publication order number: d44vh/d d44vh d45vh 15 ampere complementary silicon power transistors 80 volts 83 watts case 221a09 to220ab npn pnp style 1: pin 1. base 2. collector 3. emitter 4. collector 1 2 3 4
d44vh d45vh http://onsemi.com 2 ????????????????????????????????? ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ??????????????????? ??????????????????? characteristic ????? ????? symbol ???? ???? min ??? ??? typ ???? ???? max ??? ??? unit ????????????????????????????????? ????????????????????????????????? off characteristics ??????????????????? ? ????????????????? ? ??????????????????? collectoremitter sustaining voltage (2) (i c = 25 madc, i b = 0) ????? ? ??? ? ????? v ceo(sus) ???? ? ?? ? ???? 80 ??? ? ? ? ??? e ???? ? ?? ? ???? e ??? ? ? ? ??? vdc ??????????????????? ? ????????????????? ? ??????????????????? collectoremitter cutoff current (v ce = rated v cev , v be(off) = 4.0 vdc) (v ce = rated v cev , v be(off) = 4.0 vdc, t c = 100 c) ????? ? ??? ? ????? i cev ???? ? ?? ? ???? e e ??? ? ? ? ??? e e ???? ? ?? ? ???? 10 100 ??? ? ? ? ??? m adc ??????????????????? ? ????????????????? ? ??????????????????? emitter base cutoff current (v eb = 7.0 vdc, i c = 0) ????? ? ??? ? ????? i ebo ???? ? ?? ? ???? e ??? ? ? ? ??? e ???? ? ?? ? ???? 10 ??? ? ? ? ??? m adc ????????????????????????????????? ????????????????????????????????? on characteristics (2) ??????????????????? ? ????????????????? ? ? ????????????????? ? ??????????????????? dc current gain (i c = 2.0 adc, v ce = 1.0 vdc) (i c = 4.0 adc, v ce = 1.0 vdc) ????? ? ??? ? ? ??? ? ????? h fe ???? ? ?? ? ? ?? ? ???? 35 20 ??? ? ? ? ? ? ? ??? e e ???? ? ?? ? ? ?? ? ???? e e ??? ? ? ? ? ? ? ??? e ??????????????????? ? ????????????????? ? ? ????????????????? ? ??????????????????? collectoremitter saturation voltage (i c = 8.0 adc, i b = 0.4 adc) D44VH10 (i c = 8.0 adc, i b = 0.8 adc) d45vh10 (i c = 15 adc, i b = 3.0 adc, t c = 100 c) D44VH10 d45vh10 ????? ? ??? ? ? ??? ? ????? v ce(sat) ???? ? ?? ? ? ?? ? ???? e e e e ??? ? ? ? ? ? ? ??? e e e e ???? ? ?? ? ? ?? ? ???? 0.4 1.0 0.8 1.5 ??? ? ? ? ? ? ? ??? vdc ??????????????????? ? ????????????????? ? ? ????????????????? ? ? ????????????????? ? ??????????????????? baseemitter saturation voltage (i c = 8.0 adc, i b = 0.4 adc) D44VH10 (i c = 8.0 adc, i b = 0.8 adc) d45vh10 (i c = 8.0 adc, i b = 0.4 adc, t c = 100 c) D44VH10 (i c = 8.0 adc, i b = 0.8 adc, t c = 100 c) d45vh10 ????? ? ??? ? ? ??? ? ? ??? ? ????? v be(sat) ???? ? ?? ? ? ?? ? ? ?? ? ???? e e e e ??? ? ? ? ? ? ? ? ? ? ??? e e e e ???? ? ?? ? ? ?? ? ? ?? ? ???? 1.2 1.0 1.1 1.5 ??? ? ? ? ? ? ? ? ? ? ??? vdc ????????????????????????????????? ????????????????????????????????? dynamic characteristics ??????????????????? ? ????????????????? ? ??????????????????? current gain bandwidth product (i c = 0.1 adc, v ce = 10 vdc, f = 20 mhz) ????? ? ??? ? ????? f t ???? ? ?? ? ???? e ??? ? ? ? ??? 50 ???? ? ?? ? ???? e ??? ? ? ? ??? mhz ??????????????????? ? ????????????????? ? ? ????????????????? ? ??????????????????? output capacitance (v cb = 10 vdc, i c = 0, f test = 1.0 mhz) D44VH10 d45vh10 ????? ? ??? ? ? ??? ? ????? c ob ???? ? ?? ? ? ?? ? ???? e e ??? ? ? ? ? ? ? ??? 120 275 ???? ? ?? ? ? ?? ? ???? e e ??? ? ? ? ? ? ? ??? pf ????????????????????????????????? ????????????????????????????????? switching characteristics ??????? ??????? delay time ????????????? ????????????? ????? ????? t d ???? ???? e ??? ??? e ???? ???? 50 ??? ??? ns ??????? ??????? rise time ????????????? ????????????? (v cc = 20 vdc, i c = 8.0 adc, ????? ????? t r ???? ???? e ??? ??? e ???? ???? 250 ??? ??? ??????? ??????? storage time ????????????? ????????????? (v cc 20 vdc, i c 8.0 adc, i b1 = i b2 = 0.8 adc) ????? ????? t s ???? ???? e ??? ??? e ???? ???? 700 ??? ??? ??????? ??????? fall time ????????????? ????????????? ????? ????? t f ???? ???? e ??? ??? e ???? ???? 90 ??? ??? (2) pulse test: pulse width 300 m s, duty cycle 2%.
d44vh d45vh http://onsemi.com 3 package dimensions case 221a09 issue aa to220ab notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.147 3.61 3.73 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.018 0.025 0.46 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane t c s t u r j style 1: pin 1. base 2. collector 3. emitter 4. collector
d44vh d45vh http://onsemi.com 4 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indem nify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and re asonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employ er. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. d44vh/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada
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